| PART |
Description |
Maker |
| IRFL014N |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管）
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFP054N |
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A)
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A?)
IC/71054 24P P DIP INTERFACE 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.012ohm，身份证\u003d 81A条?
|
IRF[International Rectifier]
Power MOSFET
International Rectifier, Corp.
|
| IRFZ44N IRFZ44 IRFZ44NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)
|
IRF[International Rectifier]
|
| IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STR |
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条）
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier, Corp.
|
| HUFA75332S3S HUFA75332G3 HUFA75332P3 HUFA75332S3ST |
66A/ 55V/ 0.016 Ohm. N-Channel UltraFET Power MOSFETs
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 60A, 0.019 Ohm @ Vgs = 10V, T0263/D2PAK Package
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5N3205 |
55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*)
SURFACE MOUNT (SMD-1) 55V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.008ohm/ Id=55A*)
|
IRF[International Rectifier]
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| IRFR2905ZPBF IRFU2905ZPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )
HEXFET垄莽 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m楼? , ID = 42A )
HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mヘ , ID = 42A )
|
International Rectifier
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| HUF75332G305 HUF75332S3S HUF75332G3 HUF75332P3 HUF |
55V N-Channel UltraFET Power MOSFET
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
